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Case Connection DRAIN

Collector Current-Max (IC) 0.1

Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE AND RESISTOR

DC Current Gain-Min (hFE) 200

FET Technology JUNCTION METAL-OXIDE SEMICONDUCTOR

JESD-609 Code e0 e1 e3 e4

Moisture Sensitivity Level 1 NOT APPLICABLE

Number of Elements 1 2

Number of Terminals 3 4 5 6 8

Operating Mode DEPLETION MODE ENHANCEMENT MODE

Operating Temperature-Max 135 150 175 200

Package Body Material METAL PLASTIC/EPOXY UNSPECIFIED

Package Shape RECTANGULAR ROUND SQUARE

Package Style CHIP CARRIER CYLINDRICAL IN-LINE SMALL OUTLINE

Peak Reflow Temperature (Cel) 240 260 NOT APPLICABLE NOT SPECIFIED

Polarity/Channel Type N-CHANNEL N-CHANNEL AND P-CHANNEL P-CHANNEL

Power Dissipation Ambient-Max 1.8 2 2.5 6.25

Qualification Status Not Qualified Qualified

Reference Standard AEC-Q101 AEC-Q101; IEC-60134 MIL

Sub Category FET General Purpose Power FET General Purpose Powers FET General Purpose Small Signal Other Transistors

Surface Mount NO YES

Terminal Finish MATTE TIN Matte Tin (Sn) Nickel/Palladium/Gold (Ni/Pd/Au) Tin (Sn) TIN LEAD TIN SILVER COPPER Tin/Lead (Sn/Pb)

Terminal Form C BEND FLAT GULL WING NO LEAD THROUGH-HOLE WIRE

Terminal Position BOTTOM DUAL SINGLE

Time@Peak Reflow Temperature-Max (s) 30 40 NOT APPLICABLE NOT SPECIFIED

Transistor Application AMPLIFIER SWITCHING

Transistor Element Material SILICON

VCEsat-Max 0.3

Part Number	Description	In Stock
description1 Mfr: manufacturer	ext_desc	0
SCH1433-TL-H Mfr: on semiconductor	Small Signal Field-EffectTransistor,N-Channel,Metal-oxide Semiconductor FET	0
SD214DE Mfr: vishay		0
STS8C5H30L Mfr: st microelectronics	Dual N/P-Channel 30 V 22/55 mOhm Surface Mount STripFET™ III MOSFET - SOIC-8	0
TPS1120DR Mfr: texas instruments	Small Signal Field-Effect Transistor, 1.17A I(D),15V, 2-Element, P-Channel, Silicon, Metal-oxideSemiconductor FET, MS-012AA	0
TSM900N06CWRPG Mfr: taiwan semiconductor		0
U290 Mfr: vishay/siliconix	Small Signal Field-EffectTransistor,1-Element,N-Channel, Silicon, JunctionFET,TO-206AC	0
VN10LP Mfr: diodes inc.	TO92-3/N-CHANNEL ENHANCEMENTTO92-3/N-CHANNEL 60V MOSFET	0
ZVN2106A Mfr: diodes inc.	TO92-3/N-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FET	0
ZVN2110A Mfr: diodes inc.	N-Channel 100 V 4 Ohm Enhancement Mode Vertical DMOS FET- TO-92	0
ZVN4210A Mfr: diodes inc.		0
ZXMD63N03XTA Mfr: diodes inc.	DUAL N-CHANNEL 30V MOSFET (HDMOS)	0
ZXMD63N03XTA Mfr: diodes inc.	Dual N-Channel 30 V 0.135 Ohm Surface Mount Enhancement Mode MOSFET -MSOP-8	0
ZXMN2088DE6TA Mfr: diodes inc.	Small Signal Field-Effect Transistor, 1.7AI(D),20V,2-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET	0
ZXMN6A07FTA Mfr: zetex		0
ZXMS6006SGTA Mfr: diodes inc.	SOT223-4/60V N-CHANNEL SELF PROTECTED ENHANCEMENT	0
ZXMS6006SGTA Mfr: diodes inc.	Small Signal Field-Effect Transistor,60V,1-Element,N-Channel, Silicon,Metal-oxideSemiconductor FET,TO-261AA	0